Crystallinity and Si-H Bonding Configuration of nc-Si:H Films Grown by Layer-by-layer (LBL) Deposition Technique at Different RF Power

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dc.creatorGoh Boon Tong
dc.creatorSaadah Abdul Rahman
dc.creatorSiti Meriam Ab. Gani
dc.date2023-11-06T08:59:03Z
dc.date2023-11-06T08:59:03Z
dc.date2008
dc.date.accessioned2024-10-21T02:35:45Z
dc.date.available2024-10-21T02:35:45Z
dc.identifier0126-6039
dc.identifierukmvital:12465
dc.identifierhttps://ptsldigital.ukm.my//jspui/handle/123456789/587466
dc.identifierSiri Q1.S23
dc.identifier.urihttps://repoemc.ukm.my/handle/123456789/17132
dc.languageen
dc.publisherPenerbit UKM
dc.relationSains Malaysiana
dc.relationhttp://journalarticle.ukm.my,http://www.ukm.my/jsm/
dc.subjectCrystallite size
dc.subjectFTIR
dc.subjectnc-Si:H
dc.subjectXRD
dc.titleCrystallinity and Si-H Bonding Configuration of nc-Si:H Films Grown by Layer-by-layer (LBL) Deposition Technique at Different RF Power
dc.typeJournal Article

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