Fabrication of deep trenches in silicon wafer using deep reactive ion etching with aluminium mask

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dc.creatorBahram Azizollah Ganji
dc.creatorBurhanuddin Yeop Majlis
dc.date2023-11-06T08:42:39Z
dc.date2023-11-06T08:42:39Z
dc.date2009
dc.date.accessioned2024-10-21T02:32:04Z
dc.date.available2024-10-21T02:32:04Z
dc.identifier0126-6039
dc.identifierukmvital:11870
dc.identifierhttps://ptsldigital.ukm.my//jspui/handle/123456789/586694
dc.identifierSiri Q1.S23
dc.identifier.urihttps://repoemc.ukm.my/handle/123456789/15959
dc.languageen
dc.publisherPenerbit UKM
dc.relationSains Malaysiana
dc.relationhttp://journalarticle.ukm.my,http://www.ukm.my/jsm/
dc.subjectAlmask
dc.subjectdeep trench
dc.subjectdeep trenches ion etching
dc.subjectetch rate
dc.subjectsilicon structure
dc.titleFabrication of deep trenches in silicon wafer using deep reactive ion etching with aluminium mask
dc.typeJournal Article

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